DMG1012T MOSFET Transistor

The DMG1012T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the DMG1012T transistor as follows.

DMG1012T Transistor Specification

Transistor Code		DMG1012T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT523
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	6V
Drain Current (Maximum)	ID	0.63A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.4Ohm
Power Dissipation (Maximum)	PD	0.28W
Drain-Source Capacitance		61pF

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