CSE110 MOSFET Transistor

The CSE110 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CSE110 transistor as follows.

CSE110 Transistor Specification

Transistor Code		CSE110
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-257
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.6Ohm
Power Dissipation (Maximum)	PD	15W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V

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