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CSD85301Q2 MOSFET Transistor

The CSD85301Q2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CSD85301Q2 transistor as follows.

Circuit diagram symbol of the CSD85301Q2 transistor

CSD85301Q2 Transistor Specification

Transistor Code CSD85301Q2
Transistor Type MOSFET
Control Channel Type N-Channel
Package SON2X2
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.027Ohm
Power Dissipation (Maximum) PD 2.3W
Drain-Source Capacitance 68pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 26nS
Gate-Threshold Voltage (Maximum) 1.2V
Total Gate Charge 4.2nC

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