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CSD75211W1723 MOSFET Transistor

The CSD75211W1723 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CSD75211W1723 transistor as follows.

Circuit diagram symbol of the CSD75211W1723 transistor

CSD75211W1723 Transistor Specification

Transistor Code CSD75211W1723
Transistor Type MOSFET
Control Channel Type P-Channel
Package WLP1.7X2.3
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 4.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.04Ohm
Power Dissipation (Maximum) PD 1.5W
Drain-Source Capacitance 220pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 4.1nS
Gate-Threshold Voltage (Maximum) 1.1V
Total Gate Charge 4.5nC

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