CSD19536KCS MOSFET Transistor

The CSD19536KCS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CSD19536KCS transistor as follows.

CSD19536KCS Transistor Specification

Transistor Code		CSD19536KCS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	150A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0027Ohm
Power Dissipation (Maximum)	PD	375W
Drain-Source Capacitance		1820pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		14nS
Gate-Threshold Voltage (Maximum)		3.2V
Total Gate Charge		118nC

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