CSD19535KTT MOSFET Transistor

The CSD19535KTT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CSD19535KTT transistor as follows.

CSD19535KTT Transistor Specification

Transistor Code		CSD19535KTT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	197A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0034Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		1160pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		18nS
Gate-Threshold Voltage (Maximum)		3.4V
Total Gate Charge		75nC

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