CSD19534Q5A MOSFET Transistor

The CSD19534Q5A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CSD19534Q5A transistor as follows.

CSD19534Q5A Transistor Specification

Transistor Code		CSD19534Q5A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SON5X6
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0151Ohm
Power Dissipation (Maximum)	PD	3.2W
Drain-Source Capacitance		257pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS
Gate-Threshold Voltage (Maximum)		3.4V
Total Gate Charge		17nC

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