CSD19531Q5A MOSFET Transistor

The CSD19531Q5A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CSD19531Q5A transistor as follows.

CSD19531Q5A Transistor Specification

Transistor Code		CSD19531Q5A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SON5X6
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0064Ohm
Power Dissipation (Maximum)	PD	3.3W
Drain-Source Capacitance		560pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5.8nS
Gate-Threshold Voltage (Maximum)		3.3V
Total Gate Charge		37nC

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