CSD19531KCS MOSFET Transistor

The CSD19531KCS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CSD19531KCS transistor as follows.

CSD19531KCS Transistor Specification

Transistor Code		CSD19531KCS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0077Ohm
Power Dissipation (Maximum)	PD	214W
Drain-Source Capacitance		560pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		7.2nS
Gate-Threshold Voltage (Maximum)		3.3V
Total Gate Charge		38nC

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