CSD18509Q5B MOSFET Transistor

The CSD18509Q5B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CSD18509Q5B transistor as follows.

CSD18509Q5B Transistor Specification

Transistor Code		CSD18509Q5B
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SON5X6
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	38A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0012Ohm
Power Dissipation (Maximum)	PD	3.1W
Drain-Source Capacitance		821pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		19nS
Gate-Threshold Voltage (Maximum)		2.2V
Total Gate Charge		70nC

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