CSD17575Q3 MOSFET Transistor

The CSD17575Q3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CSD17575Q3 transistor as follows.

CSD17575Q3 Transistor Specification

Transistor Code		CSD17575Q3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SON3.3X3.3
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	27A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0023Ohm
Power Dissipation (Maximum)	PD	2.8W
Drain-Source Capacitance		393pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		1.8V
Total Gate Charge		23nC

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