CSD17559Q5 MOSFET Transistor

The CSD17559Q5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CSD17559Q5 transistor as follows.

CSD17559Q5 Transistor Specification

Transistor Code		CSD17559Q5
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SON5X6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.00115Ohm
Power Dissipation (Maximum)	PD	3.2W
Drain-Source Capacitance		1780pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		41nS
Gate-Threshold Voltage (Maximum)		1.7V
Total Gate Charge		39nC

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