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CSD17313Q2Q1 MOSFET Transistor

The CSD17313Q2Q1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CSD17313Q2Q1 transistor as follows.

Circuit diagram symbol of the CSD17313Q2Q1 transistor

CSD17313Q2Q1 Transistor Specification

Transistor Code CSD17313Q2Q1
Transistor Type MOSFET
Control Channel Type N-Channel
Package SON2X2_SUPERSO8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.03Ohm
Power Dissipation (Maximum) PD 2.4W
Drain-Source Capacitance 140pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 3.9nS
Gate-Threshold Voltage (Maximum) 1.8V
Total Gate Charge 2.1nC

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