CSD17312Q5 MOSFET Transistor

The CSD17312Q5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CSD17312Q5 transistor as follows.

CSD17312Q5 Transistor Specification

Transistor Code		CSD17312Q5
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SON5X6_SUPERSO8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	38A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0015Ohm
Power Dissipation (Maximum)	PD	3.2W
Drain-Source Capacitance		2220pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		27nS
Gate-Threshold Voltage (Maximum)		1.5V
Total Gate Charge		28nC

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