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CSD17311Q5 MOSFET Transistor

The CSD17311Q5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CSD17311Q5 transistor as follows.

Circuit diagram symbol of the CSD17311Q5 transistor

CSD17311Q5 Transistor Specification

Transistor Code CSD17311Q5
Transistor Type MOSFET
Control Channel Type N-Channel
Package SON5X6_SUPERSO8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 32A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.002Ohm
Power Dissipation (Maximum) PD 3.2W
Drain-Source Capacitance 1740pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 18nS
Gate-Threshold Voltage (Maximum) 1.6V
Total Gate Charge 24nC

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