CSD16414Q5 MOSFET Transistor

The CSD16414Q5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CSD16414Q5 transistor as follows.

CSD16414Q5 Transistor Specification

Transistor Code		CSD16414Q5
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		QFN5X6
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	34A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0019Ohm
Power Dissipation (Maximum)	PD	3.2W
Drain-Source Capacitance		2040pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		35nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		16.6nC

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