CSD16325Q5 MOSFET Transistor

The CSD16325Q5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CSD16325Q5 transistor as follows.

CSD16325Q5 Transistor Specification

Transistor Code		CSD16325Q5
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SON5X6_SUPERSO8
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	33A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.002Ohm
Power Dissipation (Maximum)	PD	3.1W
Drain-Source Capacitance		2190pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		1.4V
Total Gate Charge		18nC

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