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CSD16301Q2 MOSFET Transistor

The CSD16301Q2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CSD16301Q2 transistor as follows.

Circuit diagram symbol of the CSD16301Q2 transistor

CSD16301Q2 Transistor Specification

Transistor Code CSD16301Q2
Transistor Type MOSFET
Control Channel Type N-Channel
Package SON2X2
Drain-Source Voltage (Maximum) VDS 25V
Gate-Source Voltage (Maximum) VGS 10V
Drain Current (Maximum) ID 5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.024Ohm
Power Dissipation (Maximum) PD 2.3W
Drain-Source Capacitance 165pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 4.4nS
Gate-Threshold Voltage (Maximum) 1.55V
Total Gate Charge 2nC

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