CS8N60F MOSFET Transistor

The CS8N60F is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CS8N60F transistor as follows.

CS8N60F Transistor Specification

Transistor Code		CS8N60F
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220FL
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	48W
Drain-Source Capacitance		105pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		60.5nS
Gate-Threshold Voltage (Maximum)		4V

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