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CS830 MOSFET Transistor

The CS830 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CS830 transistor as follows.

Circuit diagram symbol of the CS830 transistor

CS830 Transistor Specification

Transistor Code CS830
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 5A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.4Ohm
Power Dissipation (Maximum) PD 87.5W
Drain-Source Capacitance 85pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 40nS
Gate-Threshold Voltage (Maximum) 4V

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