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CS7N60_A4R MOSFET Transistor

The CS7N60_A4R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CS7N60_A4R transistor as follows.

Circuit diagram symbol of the CS7N60_A4R transistor

CS7N60_A4R Transistor Specification

Transistor Code CS7N60_A4R
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 7A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.3Ohm
Power Dissipation (Maximum) PD 100W
Drain-Source Capacitance 96pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 22nS

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