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CS6N80A8 MOSFET Transistor

The CS6N80A8 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CS6N80A8 transistor as follows.

Circuit diagram symbol of the CS6N80A8 transistor

CS6N80A8 Transistor Specification

Transistor Code CS6N80A8
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.2Ohm
Power Dissipation (Maximum) PD 110W
Drain-Source Capacitance 100pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 18nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 35nC

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