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CS6N60_A8H MOSFET Transistor

The CS6N60_A8H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CS6N60_A8H transistor as follows.

Circuit diagram symbol of the CS6N60_A8H transistor

CS6N60_A8H Transistor Specification

Transistor Code CS6N60_A8H
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220AB
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.7Ohm
Power Dissipation (Maximum) PD 85W
Drain-Source Capacitance 75pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 11nS

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