CS3N65A4H-G MOSFET Transistor

The CS3N65A4H-G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CS3N65A4H-G transistor as follows.

CS3N65A4H-G Transistor Specification

Transistor Code		CS3N65A4H-G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.5Ohm
Power Dissipation (Maximum)	PD	55W
Drain-Source Capacitance		39pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		11nC

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