CS2N60A4T MOSFET Transistor

The CS2N60A4T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CS2N60A4T transistor as follows.

CS2N60A4T Transistor Specification

Transistor Code		CS2N60A4T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4.5Ohm
Power Dissipation (Maximum)	PD	35W
Drain-Source Capacitance		33pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		8nC

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