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CS25N06_B8 MOSFET Transistor

The CS25N06_B8 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CS25N06_B8 transistor as follows.

Circuit diagram symbol of the CS25N06_B8 transistor

CS25N06_B8 Transistor Specification

Transistor Code CS25N06_B8
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220AB
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 25A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.036Ohm
Power Dissipation (Maximum) PD 50W
Drain-Source Capacitance 117pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 19nS

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