CS20N60ANH MOSFET Transistor

The CS20N60ANH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CS20N60ANH transistor as follows.

CS20N60ANH Transistor Specification

Transistor Code		CS20N60ANH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3P
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.45Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		252pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		73nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		61nC

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