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CS20N60A8H MOSFET Transistor

The CS20N60A8H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CS20N60A8H transistor as follows.

Circuit diagram symbol of the CS20N60A8H transistor

CS20N60A8H Transistor Specification

Transistor Code CS20N60A8H
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.45Ohm
Power Dissipation (Maximum) PD 250W
Drain-Source Capacitance 252pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 73nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 61nC

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