CS1N65B1 MOSFET Transistor

The CS1N65B1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CS1N65B1 transistor as follows.

CS1N65B1 Transistor Specification

Transistor Code		CS1N65B1
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-92
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	9.5Ohm
Power Dissipation (Maximum)	PD	3W
Drain-Source Capacitance		17pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4.5nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		5.3nC

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