CS1N65A1 MOSFET Transistor

The CS1N65A1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CS1N65A1 transistor as follows.

CS1N65A1 Transistor Specification

Transistor Code		CS1N65A1
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-92
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	16Ohm
Power Dissipation (Maximum)	PD	3W
Drain-Source Capacitance		10pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		3.6nC

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