CS1N60_B1R MOSFET Transistor

The CS1N60_B1R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CS1N60_B1R transistor as follows.

CS1N60_B1R Transistor Specification

Transistor Code		CS1N60_B1R
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO92
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	8Ohm
Power Dissipation (Maximum)	PD	3W
Drain-Source Capacitance		18pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS

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