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CS1N60_A1H MOSFET Transistor

The CS1N60_A1H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CS1N60_A1H transistor as follows.

Circuit diagram symbol of the CS1N60_A1H transistor

CS1N60_A1H Transistor Specification

Transistor Code CS1N60_A1H
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO92
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 0.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 15Ohm
Power Dissipation (Maximum) PD 4W
Drain-Source Capacitance 10.7pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 6.3nS

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