CS1N60 MOSFET Transistor

The CS1N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CS1N60 transistor as follows.

CS1N60 Transistor Specification

Transistor Code		CS1N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO92
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	10.5Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		25pF
Operating Junction Temperature (Maximum)		150°C

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