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CS1N50A1 MOSFET Transistor

The CS1N50A1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CS1N50A1 transistor as follows.

Circuit diagram symbol of the CS1N50A1 transistor

CS1N50A1 Transistor Specification

Transistor Code CS1N50A1
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-92
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1A
Drain-Source On-State Resistance (Maximum) RDS(on) 11Ohm
Power Dissipation (Maximum) PD 3W
Drain-Source Capacitance 11pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 7nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 4nC

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