CS19N40A8H MOSFET Transistor

The CS19N40A8H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CS19N40A8H transistor as follows.

CS19N40A8H Transistor Specification

Transistor Code		CS19N40A8H
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	19A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.24Ohm
Power Dissipation (Maximum)	PD	180W
Drain-Source Capacitance		276pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		76nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		54nC

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