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CS12N65FA9H MOSFET Transistor

The CS12N65FA9H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CS12N65FA9H transistor as follows.

Circuit diagram symbol of the CS12N65FA9H transistor

CS12N65FA9H Transistor Specification

Transistor Code CS12N65FA9H
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.7Ohm
Power Dissipation (Maximum) PD 55W
Drain-Source Capacitance 184pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 18nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 44nC

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