CS1119 MOSFET Transistor

The CS1119 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CS1119 transistor as follows.

CS1119 Transistor Specification

Transistor Code		CS1119
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-254
Drain-Source Voltage (Maximum)	VDS	900V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.8Ohm
Power Dissipation (Maximum)	PD	100W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4.2V

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