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CS10N60FA9HD MOSFET Transistor

The CS10N60FA9HD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CS10N60FA9HD transistor as follows.

Circuit diagram symbol of the CS10N60FA9HD transistor

CS10N60FA9HD Transistor Specification

Transistor Code CS10N60FA9HD
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.75Ohm
Power Dissipation (Maximum) PD 50W
Drain-Source Capacitance 158pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 16nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 39nC

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