CS1010EA8 MOSFET Transistor

The CS1010EA8 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CS1010EA8 transistor as follows.

CS1010EA8 Transistor Specification

Transistor Code		CS1010EA8
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	120V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	230W
Drain-Source Capacitance		740pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		82nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		75nC

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