CS100N03F_B9 MOSFET Transistor

The CS100N03F_B9 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CS100N03F_B9 transistor as follows.

CS100N03F_B9 Transistor Specification

Transistor Code		CS100N03F_B9
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0053Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		350pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		65nS

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