CP666 MOSFET Transistor

The CP666 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CP666 transistor as follows.

CP666 Transistor Specification

Transistor Code		CP666
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO5
Drain-Source Voltage (Maximum)	VDS	50V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	1.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	8W
Operating Junction Temperature (Maximum)		200°C

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