The CMNDM8001 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the CMNDM8001 transistor as follows.
| Transistor Code | CMNDM8001 | |
|---|---|---|
| Transistor Type | MOSFET | |
| Control Channel Type | P-Channel | |
| Package | SOT-953 | |
| Transistor SMD Code | BC | |
| Drain-Source Voltage (Maximum) | VDS | 20V |
| Gate-Source Voltage (Maximum) | VGS | 10V |
| Drain Current (Maximum) | ID | 0.1A |
| Drain-Source On-State Resistance (Maximum) | RDS(on) | 8Ohm |
| Power Dissipation (Maximum) | PD | 0.25W |
| Drain-Source Capacitance | 15pF | |
| Operating Junction Temperature (Maximum) | 150°C | |
| Gate-Threshold Voltage (Maximum) | 1.1V | |
| Total Gate Charge | 0.658nC | |
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CMNDM7001 MOSFET Transistor
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