CHM8030LANGP MOSFET Transistor

The CHM8030LANGP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CHM8030LANGP transistor as follows.

CHM8030LANGP Transistor Specification

Transistor Code		CHM8030LANGP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0065Ohm
Power Dissipation (Maximum)	PD	75W
Operating Junction Temperature (Maximum)		150°C
Rise Time		21nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		35nC

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