CHM6503GP MOSFET Transistor

The CHM6503GP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CHM6503GP transistor as follows.

CHM6503GP Transistor Specification

Transistor Code		CHM6503GP
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-346
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	3.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.05Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		115pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		110nS
Gate-Threshold Voltage (Maximum)		1.2V
Total Gate Charge		10.8nC

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