CHM6426XGP MOSFET Transistor

The CHM6426XGP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CHM6426XGP transistor as follows.

CHM6426XGP Transistor Specification

Transistor Code		CHM6426XGP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-89
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.09Ohm
Power Dissipation (Maximum)	PD	1.3W
Drain-Source Capacitance		75pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		13.4nC

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