CHM6426PAGP MOSFET Transistor

The CHM6426PAGP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CHM6426PAGP transistor as follows.

CHM6426PAGP Transistor Specification

Transistor Code		CHM6426PAGP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.066Ohm
Power Dissipation (Maximum)	PD	32W
Drain-Source Capacitance		80pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		2.9nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		12.9nC

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