CHM6060NPAGP MOSFET Transistor

The CHM6060NPAGP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CHM6060NPAGP transistor as follows.

CHM6060NPAGP Transistor Specification

Transistor Code		CHM6060NPAGP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	34A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	62W
Operating Junction Temperature (Maximum)		175°C
Rise Time		3nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		28.7nC

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