CHM6030LPAGP MOSFET Transistor

The CHM6030LPAGP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CHM6030LPAGP transistor as follows.

CHM6030LPAGP Transistor Specification

Transistor Code		CHM6030LPAGP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0155Ohm
Power Dissipation (Maximum)	PD	50W
Operating Junction Temperature (Maximum)		150°C
Rise Time		190nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		19nC

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