CHM5813ESQ2GP MOSFET Transistor

The CHM5813ESQ2GP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CHM5813ESQ2GP transistor as follows.

CHM5813ESQ2GP Transistor Specification

Transistor Code		CHM5813ESQ2GP
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN3X2
Transistor SMD Code		M5813ES
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		624pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		35nC

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