CHM3301PAGP MOSFET Transistor

The CHM3301PAGP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CHM3301PAGP transistor as follows.

CHM3301PAGP Transistor Specification

Transistor Code		CHM3301PAGP
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	28A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.032Ohm
Power Dissipation (Maximum)	PD	42W
Drain-Source Capacitance		265pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		19.6nC

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